| PART |
Description |
Maker |
| 2SK2881 |
FIELD-EFFECT TRANSISTOR
For Low Frequency Amplify Application N Channel Junction type Micro(Frame type)
|
Isahaya Electronics Corporation
ETC
List of Unclassifed Manufacturers
|
| 2SK370 |
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK170 K170 |
FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
FET, Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SJ74 E001300 |
P CHANNEL JUNCTION TYPE (LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 2SK369 E001534 |
From old datasheet system
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SK371 E001536 |
N CHANNEL JUNCTION TYPE (FOR LOW NOISE AUDIO AMPLIFIER APPLICATIONS)
From old datasheet system
|
Toshiba Semiconductor
|
| 2SK880 E001590 |
From old datasheet system
M CHANNEL JUNCTION TYPE (AUDIO FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK371 |
Field Effect Transistor Silicon N Channel Junction Type For Low Noise Audio Amplifier Applications
|
TOSHIBA
|
| 2SK2145 |
Field Effect Transistor Silicon N Channel Junction Type Audio Frequency Low Noise Amplifier Applications
|
TOSHIBA
|
| 2SK3320 2SK3320-GR 2SK3320Y |
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
For Low Noise Audio Amplifier Applications
|
Toshiba Semiconductor
|
| 2SJ125 |
150mW SMD J-FET (Field-Effect Transistor), maximum rating: 50V Vgdo, -10mA Ig, -1 to -12 mA Idss.
FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE
|
Isahaya Electronics Corporation
|
| 2SK2219 1026 2SK2219-21 2SK2219-23 |
1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
N-Channel Junction FET for Capacitor Microphone Applications(应用于电容器话筒的N沟道结型场效应管) N沟道场效应晶体管的结电容麦克风应用（应用于电容器话筒沟道结型场效应管
From old datasheet system
N-Channel Junction Silicon FET
|
Sanyo Electric Co., Ltd.
|
